Title: Method of producing a doped zone of a given conductivity type in a semiconductor body

Abstract: The "emitter-dip effect" is eliminated by applying a layer of an undoped polycrystalline semiconductor onto the surface of a select zone to be doped in a semiconductor body, for example, such as on the emitter zone of a silicon body and then diffusing a select dopant through the undoped polycrystalline semiconductor layer into the select zone of the semiconductor body.

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Inventors: Glasl, Andreas (Haar, DT)
Murrmann, Helmuth (Ottobrunn, DT)

Application Number: 587966
Filing Date: 1975-06-18
Publication_date: 1977-06-14
Assignee: Siemens Aktiengesellschaft (Berlin & Munich, DT)
Primary Class(es): 438/565 257/607, 257/E21.151, 438/365, 438/564, 438/923
Other Classes:
US Patent Ref:

3621346	Nov, 1971	Chang et al.	148/187.
3703420	Nov, 1972	Vora	148/187.
3719535	Mar, 1973	Zoroglu	148/187.
3897282	Jul, 1975	White	148/175.

Other Refs:
Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Davis, J. M.
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson