Title: Method of heat treatment of wafers

Abstract: In a method of heat-treating a number of wafers each of which consists of a substance of poor heat conduction and a semiconductor layer formed on one surface of the substance, a method of heat treatment of wafers characterized in that the heat treatment is carried out under the state under which an auxiliary wafer made of a substance of good heat conduction is held in proximity to the other surface of the substance of poor heat conduction, whereby the wafers for the heat treatment are prevented from being cracked and have the characteristics made uniform.

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Inventors: Yoshinaka, Akira (Tokyo, JA)
Aoshima, Takaaki (Kokubunji, JA)
Sugita, Yoshimitsu (Kokubunji, JA)

Application Number: 667452
Filing Date: 1976-03-16
Publication_date: 1977-04-05
Assignee: Hitachi, Ltd. (JA)
Primary Class(es): 438/795 148/DIG118, 148/DIG150, 257/E21.324, 438/542, 438/770
Other Classes:
US Patent Ref:

3808674	May, 1974	Francombe et al.	148/175.
3936328	Feb, 1976	Nakata	148/1.
3939017	Feb, 1976	Ryugo et al.	148/189.
3972838	Aug, 1976	Yamashita et al.	148/189.

Other Refs:
Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Davis, J. M.
Attorney: Craig & Antonelli