Title: Electroluminescent diode having threshold effect

Abstract: A monolithic electroluminescent semiconductor device comprising a monocrystalline semiconductor body having a major surface; a semiconductor zone which extends along a part of said major surface of said semiconductor body, said zone adjoining a portion of the semiconductor body and forming therewith a diode that can emit radiation, said diode having a junction which extends to at least said surface of said semiconductor body; a current path element disposed at said major surface and connected electrically in parallel with said junction, said current path element being physically separate from said semiconductor zone and said semiconductor body portion and leaving said junction at least partly intact at said surface, whereby the current voltage characteristics of said current path and of said diode intersect each other and the dynamic admittance of said current path at the intersection is smaller than that of said diode.

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Inventors: Lebailly, Jacques (Caen, FR)

Application Number: 485225
Filing Date: 1974-07-02
Publication_date: 1977-03-22
Assignee: U.S. Philips Corporation (New York, NY)
Primary Class(es): 315/71 257/79, 257/94, 313/500
Other Classes:
US Patent Ref:

3289093	Nov, 1966	Wanlass	357/51.
3404304	Oct, 1968	Bonin et al.	313/499.
3614480	Oct, 1971	Berglund et al.	357/51.
3754171	Aug, 1973	Anzai et al.	357/51.
3806777	Apr, 1974	Edmonds	357/17.

Other Refs:
Primary Examiner: Demeo, Palmer C.
Assistant Examiner:
Attorney: Trifari; Frank R., Nigohosian; Leon