Title: Hall effect-switching device

Abstract: In an integrated semiconductor Hall-effect switching device, the Hall element is effectively prebiased by unequal base-emitter junction internal voltage drops resulting from unequal base-emitter areas in the transistors connected to the Hall element.

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Inventors: Chapron, Claude (Caen, FR)

Application Number: 648397
Filing Date: 1976-01-12
Publication_date: 1977-03-08
Assignee: U.S. Philips Corporation (New York, NY)
Primary Class(es): 327/187 257/427, 257/536, 257/552, 257/E27.005, 257/E29.323, 257/E43.003, 327/511, 327/564
Other Classes:
US Patent Ref:

3449517	Jun, 1969	Turja	307/278.
3596114	Jul, 1971	Maupin	307/278.

Other Refs:
Primary Examiner: Heyman, John S.
Assistant Examiner:
Attorney: Trifari; Frank R., Drumheller; Ronald L.