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Primary Examiner: Emery, Stephen J.
Assistant Examiner:
Attorney: Bunnell; David M.

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Title: Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel

Abstract: The oxygen content of silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by changing the surface characteristics of the portion of the silica vessel which is in contact with the melt so as to provide an increased oxygen concentration in the melt during the crystal drawing process.

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Inventors: Patrick, William John (Poughkeepsie, NY, US)
Scilla, Salvatore James (Marlboro, NY, US)
Westdorp, Wolfgang Alfred (Hopewell Junction, NY, US)

Application Number: 581307
Filing Date: 1975-05-27
Publication_date: 1977-03-01
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Class(es): 117/208 117/900, 117/932
Other Classes:
US Patent Ref:

3173765	Mar, 1965	Gobat	156/617.
3520810	Jul, 1970	Plaskett	156/616.

Other Refs: 658,110797,377

Dec, 1965	BE
Jul, 1958	UK

Other References: Lawson et al., Preparation of Single Crystals, London, Butterworths Sci. Pub., 1958, pp. 125-129.
Hartman et al., Metal Progress, Oct. 1956, pp. 100-103.
Dash, Journal of App. Phy., vol. 29, No. 4, Apr. 1958, pp. 736 and 737.
Hannay, Semi-Conductors, Monograph Series No. 140, 1960, pp. 107-110.