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Primary Examiner: Lovell, C.
Assistant Examiner: Saba, W. G.
Attorney: Spiegel; Joseph L.

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Title: Method for producing high power semiconductor device using anodic treatment and enhanced diffusion

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N.sup.- conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N.sup.+ region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N.sup.- substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

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Inventors: Aboaf, Joseph A. (Peekskill, NY, US)
Broadie, Robert W. (Hopewell Junction, NY, US)
Hull, Edward M. (La Grangeville, NY, US)
Pogge, H. Bernhard (Hopewell Junction, NY, US)

Application Number: 657869
Filing Date: 1976-02-13
Publication_date: 1977-02-01
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Class(es): 438/542 205/157, 205/199, 205/656, 257/578, 257/E21.141, 257/E21.215, 257/E29.003, 257/E29.034, 438/372, 438/928, 438/960
Other Classes:
US Patent Ref:

3494809	Feb, 1970	Ross	148/175.
3535170	Oct, 1970	Hughes	148/187.
3640806	Feb, 1972	Watanabe et al.	204/38.
3723201	Mar, 1973	Keil	148/175.
3919060	Nov, 1975	Pogge et al.	204/129.
3929529	Dec, 1975	Poponiak	148/175.
3954523	May, 1976	Magdo et al.	148/175.

Other Refs: Other References: Lloyd, R. H. F., "Semiconductor Process Control," IBM Tech. Discl. Bull., vol. 11, No. 2, July 1968, p. 143.
Poponiak, et al., "Enhanced Diffusion In Porous Silicon."
Ibid., vol. 17, No. 6, Nov. 1974, pp. 1598-1599, 1602-1603.
Dockerty, et al., "Protection of Porous Silicon from Oxidation and Impurities."