Title: Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection

Abstract: A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film of electrically insulating material such as silicon dioxide of a substantial thickness on a main surface of a semiconductor substrate so as to have a plurality of portions of said main surface exposed through a corresponding plurality of square or rectangle openings laid out at right angles, said openings being defined by said insulating material film, depositing a tin oxide film on the open areas of the semiconductor substrate, removing a portion of said tin oxide film just overlying the said insulating film for separating the respective barrier regions formed between the tin oxide film and the substrate, and providing a metal layer on said insulating film for connecting the end portion of the tin oxide film of the adjacent barrier regions. The resultant photoelectric device, even if a total light receiving area is increased, shows an improved photoelectric characteristic at low and high illumination.

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Inventors: Tanimura, Shigeru (Kyoto, JA)
Miura, Nobuaki (Nagaokakyo, JA)
Miyamoto, Mikizo (Nagaokakyo, JA)

Application Number: 347427
Filing Date: 1973-04-03
Publication_date: 1977-01-25
Assignee: Omron Tateisi Electronics Co. (Kyoto, JA)
Primary Class(es): 257/449 136/249, 148/DIG20, 148/DIG51, 148/DIG106, 148/DIG120, 257/457, 257/E27.133, 438/73, 438/85, 438/92, 438/94
Other Classes:
US Patent Ref:

3106489	Oct, 1963	Lepselter	317/234.
3381183	Apr, 1968	Turner et al.	317/235.
3391282	Jul, 1968	Kabell	317/235.
3416044	Dec, 1968	Drexfus et al.	317/234.
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Other Refs: Other References: Metal-Dependent Interface States in Thin MOS Structures; by S. Kar et al.; Applied Physics Letters vol. 18, No. 9, May 1, 1971 pp. 401-403.
Metal-Silicon Shottky Barriers; by Turner et al.; Solid State Electronics; Mar. 1968; vol. 11, No. 3, pp. 291-300.