Title: Light emitting gallium phosphide device

Abstract: A light emitting gallium phosphide device comprising a gallium phosphide (GaP) substrate of one conductivity type and at least one GaP layer of the opposite conductivity type formed on said substrate so as to form a P-N junction, wherein, the GaP layer, when impressed with forward voltage, forms light emitting regions, as viewed from above; and a light absorbing layer prepared from noncrystalline (amorphous) or polycrystalline silicon is mounted on at least one plane selected from the group consisting of the back side of the GaP substrate, those portions of the surface of the GaP substrate on which the GaP layer is not formed and the other portions of the surface of the GaP layer than the light emitting regions thereof, thereby attaining a very favorably acceptable monolithic display in high luminance and distinct contrast.

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Other info:

Inventors: Nakamura, Tadao (Tokyo, JA)
Sadamasa, Tetsuo (Tokyo, JA)
Abe, Osamu (Yokohama, JA)

Application Number: 545347
Filing Date: 1975-01-30
Publication_date: 1976-12-14
Assignee: Tokyo Shibaura Electric Co., Ltd. (Kawasaki, JA)
Primary Class(es): 257/92 257/98, 257/101, 257/102, 257/522, 257/623, 257/E33.06, 313/500
Other Classes:
US Patent Ref:

3723201	Mar, 1973	Keil	357/16.
3742598	Jul, 1973	Nishida	357/17.
3743847	Jul, 1973	Boland	357/59.
3821616	Jun, 1974	Kravitz	357/17.
3846193	Nov, 1974	Jacobu, Jr. et al.	357/16.
3912556	Oct, 1975	Grenon et al.	357/17.
3931631	Jan, 1976	Groves et al.	357/17.
3947840	Mar, 1976	Craford et al.	357/16.

Other Refs:
Primary Examiner: Larkins, William D.
Assistant Examiner:
Attorney: Oblon, Fisher, Spivak, McClelland & Maier