Title: Liquid phase epitaxial growth apparatus wherein contacted wafer floats

Abstract: Apparatus for and methods of forming a liquid phase epitaxial growth layer on a semiconductor wafer by floating the wafer on a solution which forms the source of the epitaxial growth layer.

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Inventors: Isawa, Nobuyuki (Sagamihara, JA)
Tanabe, Kazuya (Zama, JA)

Application Number: 553488
Filing Date: 1975-02-27
Publication_date: 1976-12-14
Assignee: Sony Corporation (Tokyo, JA)
Primary Class(es): 118/423 117/63, 117/67, 257/E21.117
Other Classes:
US Patent Ref:

616821	Dec, 1898	Bock	156/622.
2414679	Jan, 1947	West	156/616.
2414680	Jan, 1947	West	156/616.
2759803	Aug, 1956	Dauncey	156/621.
2810366	Oct, 1957	Weiskopf et al.	118/425.
3460510	Aug, 1969	Currin	23/273.
3463680	Aug, 1969	Melngailis	156/622.
3597171	Aug, 1971	Knippenberg	156/607.
3765959	Oct, 1973	Unno	156/622.
3783825	Jan, 1974	Kobayasi	156/622.
3854447	Dec, 1974	Kobayashi	156/622.

Other Refs:
Primary Examiner: Emery, Stephen J.
Assistant Examiner:
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson