Title: Bonded electrical contact for thermoelectric semiconductor element

Abstract: A bonded electrical contact and method for a thermoelectric element. A thin layer of a ductile diffusion barrier, which is non-poisonous to thermoelectric materials, such as iron, tungsten, molybdenum, or niobium, is disposed between the thermoelectric material and a contacting shoe, such as stainless steel, which has poisonous alloy constituents. The thermal expansion coefficient of the diffusion barrier, which does not match that of the thermoelectric material, is overridden by that of the shoe, whose coefficient does correspond with that of such high expansion thermoelectrics as the telluriden.

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Inventors: Miller, Norman C. (Woodland Hills, CA, US)
Saunders, Richard C. (Simi, CA, US)

Application Number: 437100
Filing Date: 1974-01-28
Publication_date: 1976-10-26
Assignee: Rockwell International Corporation (El Segundo, CA)
Primary Class(es): 136/237 136/238, 257/747, 257/751, 257/930
Other Classes:
US Patent Ref:

3082277	Mar, 1963	Lane et al.	136/237.
3208835	Sep, 1965	Duncan et al.	136/237.
3306784	Feb, 1967	Roes	136/237.
3382109	May, 1968	Kendal, Jr. et al.	136/237.

Other Refs:
Primary Examiner: Behrend, Harvey E.
Assistant Examiner:
Attorney: Humphries; L. Lee, Kolin; Henry