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Primary Examiner: Segal, Robert
Assistant Examiner:
Attorney: Levine; Harold, Comfort; James T., Hiller; William E.

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Title: Metal-semiconductor diode infrared detector having semi-transparent electrode

Abstract: This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narrow band gap semiconductor material or on an epitaxial layer or evaporated film of such material provided on a substrate. In a specific example, the narrow band gap semiconductor material of the substrate is specially prepared (Pb,Sn)Te or an epitaxial layer or evaporated film of (Pb,Sn)Te on a (Pb,Sn)Te substrate. The detected radiation is transmitted through the semi-transparent electrode on top of the photovoltaic detector.

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Inventors: Chapman, Richard A. (Dallas, TX, US)
Johnson, Milo R. (Richardson, TX, US)
Morris, Henry B. (Plano, TX, US)

Application Number: 446185
Filing Date: 1974-02-27
Publication_date: 1976-09-14
Assignee: Texas Instruments Incorporated (Dallas, TX)
Primary Class(es): 257/436 257/441, 257/449, 257/E27.136, 257/E31.029, 257/E31.065, 313/366
Other Classes:
US Patent Ref:

3415680	Dec, 1968	Perri et al.	357/54.
3564309	Feb, 1971	Hoeberechts et al.	313/367.
3696262	Oct, 1972	Antypas	313/94.
3743899	Jul, 1973	Berth et al.	313/366.
3757123	Sep, 1973	Archer et al.	250/338.
3778657	Dec, 1973	Kubo et al.	313/367.
3783324	Jan, 1974	Wronski et al.	313/94.
3786294	Jan, 1974	Wilson et al.	313/367.

Other Refs: 898,8761,239,893

Apr, 1972	CA
Jul, 1971	UK

Other References: Calawa et al, "Crystal Growth, Annealing, and Diffusion of Lead-Tin Chalcogenides; " Transactions of the Metallurgical Society of AIME; vol. 242; Mar., 1968; pp. 374-383.