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Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Davis, J. M.
Attorney: Christoffersen; H., Williams; R. P.

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Title: Method of making a semiconductor device

Abstract: Portions of a polycrystalline silicon layer disposed on an insulator are removed after diffusing donor impurities into and through the regions to be removed. The regions to be retained are either previously or simultaneously doped with acceptor impurities. The method provides improved control of the size and the shape of the edges of the retained regions.

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Inventors: Carley, Donald Raymond (Somerville, NJ, US)

Application Number: 571106
Filing Date: 1975-04-24
Publication_date: 1976-09-14
Assignee: RCA Corporation (New York, NY)
Primary Class(es): 438/548 148/DIG43, 148/DIG51, 148/DIG53, 148/DIG118, 148/DIG122, 148/DIG151, 257/E21.309, 438/412, 438/563, 438/658, 438/705, 438/924, 438/978
Other Classes:
US Patent Ref:

3160539	Dec, 1964	Hall et al.	156/17.
3675319	Jul, 1972	Smith	148/187.
3738880	Jun, 1973	Laker	148/187.
3830665	Aug, 1974	Roman et al.	156/17.
3846198	Nov, 1974	Wen et al.	156/17.
3847687	Nov, 1974	Davidsohn	148/187.

Other Refs: Other References: Greenwood, "Ethylene Diamine-Catechol-Water Mixture --etc.," J. Electrochem. Soc., vol. 116, No. 9, Sept. 1969, pp. 1325, 1326.