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Primary Examiner: Larkins, William D.
Assistant Examiner: Munson, Gene M.
Attorney: Park; Theodore S.

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Title: Flat-band voltage reference

Abstract: A flat-band voltage reference includes two insulated-gate field-effect transistors, hereinafter IGFETs, which are substantially identical except for their flat-band voltage characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the IGFETs produces a voltage reference which is substantially independent of variances in operating points, supply potentials, and temperature.

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Inventors: Tobey, Jr., Morley C. (Sunnyvale, CA, US)
Giuliani, David J. (San Carlos, CA, US)
Ashkin, Peter B. (Sunnyvale, CA, US)

Application Number: 587188
Filing Date: 1975-06-16
Publication_date: 1976-08-17
Assignee: Hewlett-Packard Company (Palo Alto, CA)
Primary Class(es): 327/543 257/E29.148, 323/314, 327/513, 327/581
Other Classes:
US Patent Ref:

3673471	Jun, 1972	Klein et al.	357/23.
3806742	Apr, 1974	Powell	307/297.
3868274	Feb, 1975	Hubar et al.	357/41.
3870906	Mar, 1975	Hughes	307/297.
3875430	Apr, 1975	Prak	307/297.

Other Refs: Other References: MacHattie "A Highly Stable Current or Voltage Source" J. of Physics E: Scientific Instruments (GB) vol. 5 (10/72) pp. 1016-1017.