Title: Semiconductor device having bonding pads extending over active regions

Abstract: A high-frequency transistor of planar structure having emitter and base regions of extremely fine structure to reduce the junction capacity. For the wire bond connection between said emitter or base region and an external lead wire, the transistor has the aluminium electrodes which swell and extend on the insulating film.

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Inventors: Okumura, Tomisaburo (Kyoto, JA)
Matsuo, Takatoshi (Kyoto, JA)

Application Number: 138311
Filing Date: 1971-04-28
Publication_date: 1976-08-03
Assignee: Matsushita Electronics Corporation (Osaka, JA)
Primary Class(es): 257/587 257/786, 257/E23.015, 257/E23.167
Other Classes:
US Patent Ref:

3191070	Jun, 1965	Jones et al.	17/235.
3204321	Sep, 1965	Kile	317/234.
3237271	Mar, 1966	Arnold et al.	317/234.
3287610	Nov, 1966	Reber	317/234.
3290570	Dec, 1964	Cunningham	317/234.
3361592	Feb, 1968	Quetsc, Jr. et al.	117/212.
3363150	Jan, 1968	Whitman et al.	317/234.
3373323	Mar, 1968	Wolfrum et al.	317/235.
3390025	Jun, 1968	Strieter	317/235.
3431468	Mar, 1969	Huffman	317/101.
3443173	May, 1969	Tsang et al.	317/235.
3457631	Jul, 1969	Hall et al.	317/235.
3462349	Aug, 1969	Gorgenyi	204/15.
3471755	Oct, 1969	Bilotti	37/235.
3473979	Oct, 1969	Haenichen	317/235.
3483440	Dec, 1969	Dulin	317/234.
3489964	Jan, 1970	Masuda	317/235.
3496427	Feb, 1970	Lee	317/234.

Other Refs:
Primary Examiner: James, Andrew J.
Assistant Examiner:
Attorney: Stevens, Davis, Miller & Mosher