Title: Charge storage target and method of manufacture

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Abstract: A charge storage device of the type in which a target electrode provides a plurality of spatially distributed charge storage sites formed on an output side of a semiconductor wafer with means associated with the storage sites for sensing and converting the charge on the storage sites into an electrical signal. Input excitation is directed onto the other or input side of the semiconductor wafer and may be in the form of electrons or light capable of generating electron-hole pairs within the semiconductor wafer which diffuse through to the storage sites. The output side of the semiconductor wafer is provided with an apertured insulating layer with a reading electron beam making contact through the apertures in the insulating coating to the spatially distributed storage sites. This invention is directed to improvements in the storage sites within the apertures of the insulating layer of said target electrode so that electron contact areas extend above the surface of the insulating layer and overlap at least a portion of the adjacent insulating layer and to methods of manufacturing said target electrode.


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