Title: Electroluminescent semiconductor diode with hetero-structure

Abstract: An electroluminescent semiconductor diode having a homogeneous monocrystalline semiconductor substrate providing a first zone on which an epitaxial layer has been formed providing a second zone. This second zone has a forbidden-band-width which changes steadily with increasing distance from the first zone. This second zone possesses a junction between a sub-zone having the properties of a "direct semiconductor" and a sub-zone having the properties of a so-called "indirect semiconductor" which lies parallel to the boundary between the first zone and the second zone and also parallel to the pn-junction of the diode. The pn-junction of the diode is located in the second zone and particularly in the sub-zone have the properties of an "indirect semiconductor" but at such a short distance from the junction of the two sub-zones that the major part of the charge carriers injected from the pn-junction in the direction towards the sub-zone having the properties of a direct semiconductor pass to this latter sub-zone.

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Inventors: Heywang, Walter (Neukeferloh, DT)

Application Number: 523118
Filing Date: 1974-11-12
Publication_date: 1976-06-22
Assignee: Siemens Aktiengesellschaft (Berlin, Munich, DT)
Primary Class(es): 257/86 257/94
Other Classes:
US Patent Ref:

3537029	Oct, 1970	Kressel et al.	357/17.
3617820	Nov, 1971	Herzog	357/17.
3636471	Jan, 1972	Rediker	357/17.
3758875	Sep, 1973	Hayashi	250/552.
3852797	Dec, 1974	Lebailly et al.	250/211.

Other Refs:
Primary Examiner: Smith, Alfred E.
Assistant Examiner: Nelms, D. C.
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson