Title: Pattern definition in an organic layer

Abstract: An improved method of defining a pattern in a layer of organic material includes depositing a relatively thin layer of silicon dioxide on the layer of organic material, applying to the silicon dioxide layer a film of primer solution comprising a silane derivative, and then forming a photoresist etch mask on the film. By utilizing an ultrasonic etch bath, a uniform and well-defined pattern is etched in the layer of organic material.

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Inventors: Sonneborn, Kurt Jacques (Lebanon, NJ, US)

Application Number: 528402
Filing Date: 1974-11-29
Publication_date: 1976-06-08
Assignee: RCA Corporation (New York, NY)
Primary Class(es): 430/3 216/48, 216/83, 257/E21.255, 257/E21.257, 427/259, 427/264, 427/412.1, 430/323, 438/702, 438/746, 438/950
Other Classes:
US Patent Ref:

3405017	Oct, 1968	Gee	156/13.
3482977	Dec, 1969	Baker	156/17.
3549368	Dec, 1970	Collins et al.	156/17.

Other Refs:
Primary Examiner: Powell, William A.
Assistant Examiner: Leitten, Brian J.
Attorney: Christoffersen; H., Williams; Robert P., Magee; Thomas H.