|
PatentVote.com: Vote on your favourite invention!
|
|
 |
Title: Semiconductor photoelectric device
Abstract:
A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type silicon, the film being formed to a thickness less than 25A., for example, and then further depositing thereon a tin oxide film. It was found that adoption of the abovementioned (100) orientation reduces the reverse saturation current and thus the dark current of the device, with the result that the open voltage of the device is accordingly increased. It was also found that proper choice of specific resistivity of the substrate improves linearity of the photoelectric characteristic.
Other info: Inventors: Tanimura, Shigeru (Kyoto, JA) Miura, Nobuaki (Oita, JA) Miyamoto, Mikizo (Nagaokakyo, JA) Application Number: 388148 Filing Date: 1973-08-14 Publication_date: 1976-04-20 Assignee: Omron Tateisi Electronics Co., Ltd. (JA) Primary Class(es): 257/443 136/255, 136/261, 257/449, 257/450, 257/457, 257/475, 257/627, 257/E31.084 Other Classes: US Patent Ref:
Other Refs: Other References: Solid-State Electronics, Metal-Silicon Schottky Barriers, by Turner, Vol. No. 3 pp. 291-300 Mar. 1968. | |