Title: Cascade-connected transistor amplifier

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Abstract: A cascade-connected transistor amplifier comprised of a bipolar transistor having one of its collector and emitter electrodes connected directly to the gate electrode of an FET. The bipolar transistor comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type disposed adjacent the first semiconductor region, a third semiconductor region of the first conductivity type disposed adjacent the second semiconductor region, and a potential barrier positioned within the first semiconductor region spaced from and opposite the junction defined by the first and second semiconductor regions by a distance smaller than the diffusion distance of minority carriers injected into the first semiconductor region, the semiconductor regions being provided with emitter, base and collector electrodes, respectively. The FET has triode-type dynamic characteristics. A first load impedance is connected to one of the collector and emitter electrodes, and a second load impedance is connected in series with the drain-source circuit of the field effect transistor. Operating voltages are supplied to the respective bipolar and field effect transistors through the respective load impedances. An input signal is applied to the base electrode of the bipolar transistor. In one embodiment, an AC negative feedback impedance defines a feedback path between the drain electrode of the field effect transistor and the emitter electrode of the bipolar transistor. The AC feedback circuit can be used to compensate for equalizing of the input signal.


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