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Title: Method of preparing multi-layer semiconductor hetero-structures on the basis of compounds A.sup.III B.sup.V where A.sup.III is a metal of group three and B.sup.V is a non-metal of group five
Abstract:
The method of preparing multi-layer semiconductor heterostructures on the basis of compounds A.sup.III B.sup.V, where A.sup.III is an element of the third group and B.sup.V is an element of the fifth group, consists in crystallization of layers of this heterostructure on a substrate from a liquid zone which is gallium or bismuth pre-saturated with compounds A.sup.III B.sup.V from a source which is a solid solution of compounds A.sup.III B.sup.V feeding the liquid zone with the material of the crystallizing layers.
Other info: Inventors: Golubev, Lev Vasilievich (ULIT, SA) Korneev, Evgeny Fedorovich (PROSPEKT 50 LETI, YA) Shmartsev, Jury Vasilievich (PROSPE, KT) Application Number: 482595 Filing Date: 1974-06-24 Publication_date: 1976-04-06 Assignee: Primary Class(es): 117/56 117/62, 117/64, 117/67, 117/939, 117/953, 205/104, 205/157, 252/62.3GA, 257/E21.117 Other Classes: US Patent Ref:
Other Refs: Other References: J. of the Electrochemical Society, Vol. 120, No. 4, Apr. 1973, pp. 583 and 584. | |