Home

Primary Examiner: Grimm, Siegfried H.
Assistant Examiner:
Attorney: O'Halloran; John T., Lombardi, Jr.; Menotti J., Hill; Alfred C.

Next ten patents ordered by date:

Acoustic wave devices involving perturbation of acoustic velocity by diffusion of metals
Slot line/microstrip hybrid
Phase shifter
Weighting surface wave filters by withdrawing electrodes
Bendable wave guide
Narrow multi-pole circuit breaker having inertia actuated overtravel for latch release
Current limiting circuit breaker
Electromagnetic relay structure
Radiation resistant ducted superconductive coil
High-power, low-loss high-frequency electrical coil

Translate:
En
De
Es
Fr
It
Pt
Ja
Ko
Zh

Title: Microwave solid state circuit employing a bipolar transistor structure

Abstract: This microwave circuit incorporates a transistor structure that provides either a two port amplifier or an injection frequency locked oscillator. This circuit eliminates circulators employed with Gunn and Impatt diode amplifiers and injection frequency locked oscillators. The collector-base junction is reverse biased so that the collector region functions either in the Impatt mode or in the transferred electron mode. An RF input signal is applied across the forward biased emitter-base junction. With a load across the collector-base junction having a conductance equal to the absolute value of the negative conductance generated by the collector region, the circuit functions as an oscillator at a frequency which is injection locked to the frequency of the input signal. With a load of increased conductance to suppress oscillations, i.e. overload the collector region, the circuit functions as an amplifier.

Do you think this is a good invention? Vote now:

Votes so far: For:(0) Against:(0)
Other info:

Inventors: Froom, Jocelyn (Bishop Stortford, EN)
Carroll, John Edward (Cambridge, EN)

Application Number: 553351
Filing Date: 1975-02-26
Publication_date: 1976-03-23
Assignee: International Standard Electric Corporation (New York, NY)
Primary Class(es): 331/107R 257/6, 257/539, 257/553, 257/604, 330/5, 330/61A, 330/250, 331/107G, 331/108R
Other Classes:
US Patent Ref:

3531698	Sep, 1970	Atalla	331/107.
3855605	Dec, 1974	Kawamoto	357/57.

Other Refs: Other References: atalla et al., "Emitter Controlled Negative Resistance In GaAs" Solid State Electronics, Vol. 12, Aug. 1969, pp. 619-629.