Title: Semiconductor device and method of manufacture therefor

Abstract: A semiconductor device and method of manufacture therefor includes the establishment of at least one PN junction in a semiconductor chip through conventional techniques. Electrical contacts are formed. The entire semiconductor device is coated with a passivant coating having a first layer of low temperature silicon dioxide and a second layer of glass, the second layer of glass being applied in two steps.

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Inventors: Hartman, David K. (Manlius, NY, US)

Application Number: 556645
Filing Date: 1975-03-10
Publication_date: 1976-03-16
Assignee: General Electric Company (Syracuse, NY)
Primary Class(es): 438/565 257/644, 257/E21.165, 257/E21.271, 257/E21.502, 257/E23.118, 438/372, 438/655, 438/763, 438/958
Other Classes:
US Patent Ref:

3542550	Nov, 1970	Conrad	29/588.
3571913	Mar, 1971	Bodway	29/578.
3673679	Jul, 1972	Carbojal	29/578.
3689392	Sep, 1972	Sandera	357/73.
3697334	Oct, 1972	Yamamoto	29/588.
3728784	Apr, 1973	Schmidt	29/588.
3755720	Aug, 1973	Kern	357/73.

Other Refs:
Primary Examiner: Tupman, W.
Assistant Examiner:
Attorney: Mooney; Robert J., Stoner; Douglas E.