Title: Method of manufacturing shaped hollow bodies

Abstract: A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300.degree. C. in a flowing gas atmosphere, preferably a mixture of H.sub.2 and SiHCl.sub.3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.

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Inventors: Dietze, Wolfgang (Munich, DT)
Kasper, Andreas (Garching-Hochbrueck, DT)

Application Number: 369830
Filing Date: 1973-06-14
Publication_date: 1976-03-09
Assignee: Siemens Aktiengesellschaft (Berlin & Munich, DT)
Primary Class(es): 264/81 65/32.4, 219/553, 264/83, 438/488
Other Classes:
US Patent Ref:

2925357	Feb, 1960	Kothen	117/106.
3329527	Jul, 1967	Harris	117/106.
3425878	Feb, 1969	Deisin et al.	117/106.
3751539	Aug, 1973	Reuschel et al.	264/81.

Other Refs:
Primary Examiner: Arnold, Donald J.
Assistant Examiner: Parrish, John
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson