Title: Gallium-phosphorus simultaneous diffusion process

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Abstract: By protecting one surface of a silicon element with an oxide layer while leaving another surface exposed it is possible to diffuse both gallium and phosphorus into the silicon element simultaneously in a selective manner. Gallium will penetrate the oxide layer while phosphorus will not, thereby forming a P conductivity type layer beneath the oxide layer. At the same time both gallium and phosphorus will diffuse into the remaining surfaces of the element. A higher concentration of phosphorus than gallium will diffuse to all depths, thereby forming an N conductivity type layer adjacent the exposed surface of the silicon element.


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