Title: Semiconductor devices and methods of manufacturing same

Abstract: A gate self-alignment type field-effect semiconductor device is formed with an insulating film deposited on the surface of a substrate. A polycrystal silicon doped with impurities having a type of conductivity opposite to the conductivity of the substrate extends through a gap in said insulating film to engage the surface of said substrate so as to serve as both a diffusion source and electrode for each of the source and drain of the device.

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Inventors: Harigaya, Hiroshi (Suwa, JA)
Kano, Toshio (Suwa, JA)
Aizawa, Eishi (Suwa, JA)

Application Number: 550396
Filing Date: 1975-02-18
Publication_date: 1976-03-09
Assignee: Kabushiki Kaisha Suwa Seikosha (Tokyo, JA)
Primary Class(es): 438/287 148/DIG141, 257/E29.04, 257/E29.146, 438/301, 438/586
Other Classes:
US Patent Ref:

3475234	Oct, 1969	Kerwin	29/571.
3566518	Mar, 1971	Brown	29/571.
3699646	Oct, 1972	Vadacz	29/571.
3750268	Aug, 1973	Wang	29/571.

Other Refs:
Primary Examiner: Tupman, W.
Assistant Examiner:
Attorney: Blum, Moscovitz, Friedman & Kaplan