Title: Semiconductor device with multi-layered metal interconnections

Abstract: Improved metal interconnections for a semiconductor device is described. The interconnections comprise a first metal layer, eg. aluminum, connected to the semiconductor, a second metal layer, eg. gold, for external connection, and a third metal layer interconnecting the first and second metal layers such that the junction areas of interconnection are laterally spaced from one another.

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Inventors: Gelsing, Richardus Johannes Henricus (Eindhoven, NL)
VAN Steensel, Kees (Eindhoven, NL)

Application Number: 888504
Filing Date: 1969-12-29
Publication_date: 1976-03-02
Assignee: U.S. Philips Corporation (New York, NY)
Primary Class(es): 257/751 257/736, 257/737, 257/E23.014, 257/E23.02, 257/E23.16
Other Classes:
US Patent Ref:

3335338	Aug, 1967	Lepselter	317/234.
3429029	Feb, 1969	Lanjdon et al.	29/589.
3430104	Feb, 1969	Burgess et al.	317/101.
3436616	Apr, 1969	Jarrad	317/234.
3480412	Nov, 1969	Duffe, Jr. et al.	29/195.
3495324	Feb, 1970	Guthrie et al.	29/578.
3501681	Mar, 1970	Weir	317/234.
3518506	Jun, 1970	Gates	317/234.
3569796	Mar, 1971	Mulfor, Jr.	317/234.

Other Refs:
Primary Examiner: Larkins, William D.
Assistant Examiner:
Attorney: Trifari; Frank R., Oisher; Jack