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Title:
Combined electron beam semiconductor modulator and junction laser
Abstract:
A combined pulse modulated laser in which a modulated cold cathode device is utilized to excite a combined electron beam bombarded semiconductor device grown integrally with a crystal laser to achieve modulation of the laser output with fast rise and fall times under low voltage and high current conditions.
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Inventors:
Zinn, Mortimer H. (Elberon, NJ, US)
Application Number:
504002
Filing Date: 1974-09-06 Publication_date: 1976-03-02 Assignee:
The United States of America as represented by the Secretary of the Army (Washington, DC)
Primary Class(es):
372/26
330/44, 330/308, 372/38.07, 372/44, 372/50, 372/74
Other Classes:
US Patent Ref:
| 3283160 | Nov, 1966 | Levitt et al. | 357/19. |
Other Refs:
Other References:
Wagner, "EBS Application to Laser Pulsing," IEEE Journal of Quantum Electics, Vol. QE -9, pp. 606-607, June 1973. Schade et al.,"GaAs-(AlGa)As Cold-Cathode Structure," Applied Physics Letters, Vol. 20, No. 10, 15 May 1972, pp. 385-387. |