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Primary Examiner: Mullins, James B.
Assistant Examiner:
Attorney: Craig & Antonelli

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Title: Semiconductor speech path switch circuitry

Abstract: A semiconductor speech path switch circuitry is disclosed in which a terminal is provided to one region of a semiconductor device located between two points to be channeled to each other and having a four-region structure of PNPN with three PN junctions, the one region having the lowest impurity concentration in the semiconductor device and also determining the breakdown voltage thereof, a bias voltage being applied to the terminal through a variable impedance circuit exhibiting a high impedance in the turned-on state of the semiconductor device while exhibiting a low impedance in the turned-off state of the semiconductor device. In the semiconductor channel switch circuitry, the crosstalk through the junction capacitances is greatly reduced and the available frequency band is wide.

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Other info:

Inventors: Okuhara, Shinzi (Fujisawa, JA)

Application Number: 484320
Filing Date: 1974-06-28
Publication_date: 1976-03-02
Assignee: Hitachi, Ltd. (JA)
Primary Class(es): 379/242 327/450, 379/292
Other Classes:
US Patent Ref:

3531773	Sep, 1970	Beebe	179/18.
3688051	Aug, 1972	Aagaard	179/18.

Other Refs: Other References: G.E. Transistor Manual General Electric Company Syracuse, New York, 1964, pp. 393, 394.