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Primary Examiner: Vertiz, Oscar R.
Assistant Examiner: Langel, Wayne A.
Attorney: Craig & Antonelli

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Title: Method of manufacturing light sensitive heterodiode

Abstract: A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.

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Inventors: Tanaka, Yasuo (Koganei, JA)
Yamamoto, Hideaki (Kokubunji, JA)
Ooki, Keiko (Tachikawa, JA)
Goto, Naohiro (Machida, JA)
Takigawa, Toru (Mobara, JA)

Application Number: 450186
Filing Date: 1974-03-11
Publication_date: 1976-03-02
Assignee: Hitachi, Ltd. (BOTH OF, JA); Nippon Hoso Kyokai (BOTH OF, JA)
Primary Class(es): 438/85 204/192.26, 204/192.29, 204/192.3, 204/192.32, 257/43, 257/184, 257/200, 257/461, 257/614, 438/86, 438/94
Other Classes:
US Patent Ref:

3755002	Aug, 1973	Hirai et al.	317/235.
3770606	Nov, 1970	Lepselter	204/192.
3805128	Apr, 1974	Scholl et al.	317/234.

Other Refs: Other References: Kajiyama et al., "Electrical and Optical Properties of S.sub.4 O.sub.2 --Si Hetero-junctions," Japan J. Appl. Phys. b, (1967), 905-906.