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Primary Examiner: Weiffenbach, Cameron K.
Assistant Examiner:
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson

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Title: Method of producing epitaxially semiconductor layers

Abstract: Method of producing epitaxially deposited layers of semiconductor material on a substrate by thermal decomposition of a gaseous compound of a select semiconductor material and depositing a seed layer of such semiconductor on the substrate and then adding a hydrogen halide to the gaseous compound and depositing additional semiconductor material on the seed layer.

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Inventors: Druminski, Manfred (Vaterstetten, DT)

Application Number: 339216
Filing Date: 1973-03-08
Publication_date: 1976-03-02
Assignee: Siemens Aktiengesellschaft (Berlin & Munich, DT)
Primary Class(es): 117/90 117/93, 117/902, 117/936, 148/DIG3, 148/DIG25, 148/DIG79, 148/DIG150, 438/479
Other Classes:
US Patent Ref:

3139361	Jun, 1964	Rasmanis	117/106.
3177100	Apr, 1965	Mayer et al.	117/106.
3192083	Jun, 1965	Sirtl	117/217.
3212922	Oct, 1965	Sirtl	117/106.
3445300	May, 1969	Sirtl	117/106.
3484311	Dec, 1969	Benzing	117/106.
3508962	Apr, 1970	Manasevit et al.	117/106.
3511702	May, 1970	Jackso, Jr. et al.	117/212.
3653991	Apr, 1972	Sirtl et al.	148/175.
3698944	Oct, 1972	Dyer	117/201.

Other Refs: 1,619,980

Jan, 1971	DT

Other References: Filby et al. Single-crystal films of silicon on insulators In Brit. J. Appl. Phys. 18: pp. 1357 to 1382, 1967.
Hart et al. Electrical properties of epitaxial silicon films on .alpha.-alumina In Brit. J. Appl. Phys. 18: pp. 1389 to 1398, 1967.
Reisman et al. The Chemical Polishing of Sapphire and MgAl Spinel In J. Electrochem. Soc.:Solid State Science. 118(10): pp. 1653-1657. Oct. 1971.