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Primary Examiner: Drummond, Douglas J.
Assistant Examiner: Leitten, Brian J.
Attorney: Wallace; Robert J.

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Title: Diaphragm formation on silicon substrate

Abstract: A method of making thin diaphragms having an accurately controllable thickness for semiconductor pressure responsive devices. An oxide coating is thermally grown in selected regions on the front side of a silicon wafer. The oxide extends into the wafer at an extremely accurate and controllable depth to form a groove in the wafer front side defined by the selected regions. Portions of the wafer are then etched from the back side until the bottom of the groove is reached thereby providing a diaphragm having a thickness equal to the accurately reproducible depth of the groove.

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Inventors: Jaffe, James M. (Southfield, MI, US)

Application Number: 460106
Filing Date: 1974-04-11
Publication_date: 1976-03-02
Assignee: General Motors Corporation (Detroit, MI)
Primary Class(es): 438/16 257/419, 257/E29.324, 438/53, 438/977
Other Classes:
US Patent Ref:

3032753	May, 1962	Knapp et al.	156/345.
3810796	May, 1974	Skaggs et al.	156/17.
3819431	Jun, 1974	Kurtz et al.	156/7.

Other Refs: Other References: J. Hoekstra, "Metal Etch Monitor," IBM Technical Disclosure Bulletin, Vol. 14, No. 9, Feb. 1972, pp. 2680-2682.
M. Chwalow, "Etch Completion Indication," IBM Technical Disclosure Bulletin, Vol. 15, No. 2, July 1972, pp. 606-607.