Home

Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Saba, W. G.
Attorney: Urbano; M. J.

Next ten patents ordered by date:

Glass passivated gold diffused SCR pellet and method for making
Energetic liquid monopropellant compositions containing hydrazine and methoxylamine perchlorate
Method of producing tarnish resistant copper and copper alloys and products thereof
Diaphragm formation on silicon substrate
Method of fabricating a charged couple radiation sensing device
Paper art process
Method and composition for applying a covering to a wall or like substrate
Plastic laminate, article and method of making same
Method of sealing the end of a sleeved roll
Process for forming decorative surface coverings

Translate:
En
De
Es
Fr
It
Pt
Ja
Ko
Zh

Title: Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy

Abstract: In order to insure that the doping profiles of Sn-doped Group III(a)-V(a) Ga-containing layers grown by molecular beam epitaxy follow relatively closely the time-intensity profile of the dopant beam, the substrate temperature should not exceed about 550.degree.C.

Do you think this is a good invention? Vote now:

Votes so far: For:(0) Against:(0)
Other info:

Inventors: Cho, Alfred Yi (New Providence, NJ, US)

Application Number: 563078
Filing Date: 1975-03-28
Publication_date: 1976-03-02
Assignee: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ)
Primary Class(es): 117/105 117/108, 117/954, 148/DIG18, 148/DIG20, 148/DIG56, 148/DIG65, 148/DIG169, 252/62.3GA, 257/609, 257/E21.1
Other Classes:
US Patent Ref:

3612958	Oct, 1971	Saito et al.	148/175.
3751310	Aug, 1973	Cho	148/175.
3839084	Oct, 1974	Cho et al.	148/175.

Other Refs: Other References: davey et al., "Epitaxial GaAs Films Deposited by Vacuum Evaporation," J. Applied Physics, Vol. 39, No. 4, Mar. 1968, pp. 1941-1948.
Cho et al., "Molecular Beam Epitaxy of GaAs, Al.sub.x Ga.sub.1.sub.-x As and GaP," 1970 Symposium on GaAs, Paper No. 2, pp. 18-29.
Cho et al., "Epitaxy of Silicon Doped Gallium Arsenide by Molecular Beam Method," Metallurgical Trans., Vol. 2, Mar. 1971, pp. 777-780.
Cho et al., "Properties of Schottky . . . GaAs . . . . . . Epitaxial Layers," J. Applied Physics, Vol. 45, No. 3, Mar. 1974, pp. 1258-1263.