Title: Semiconductor I.C. with protection against reversed power supply

Abstract: A semiconductor integrated circuit includes an integrated resistor body of one conductivity type being contained in a lightly doped pocket of the opposite conductivity type. A metal contact is made to a surface portion of the lightly doped pocked forming a Schottky diode. The metal contact is connected to the hot (Vcd) power supply terminal and thus the diode is normally forward biased. When the power supply is inadvertently reversed, the Schottky diode is reverse biased and prevents destructive currents from flowing in a forward biased p-n isolation junction between the substrate and the pocket.

Do you think this is a good invention? Vote now:

Votes so far: For:(0) Against:(0)
Other info:

Inventors: Genesi, Robert C. (Sterling, MA, US)

Application Number: 467179
Filing Date: 1974-05-06
Publication_date: 1976-02-24
Assignee: Sprague Electric Company (North Adams, MA)
Primary Class(es): 257/477 257/484, 257/546, 257/E27.044, 327/530, 327/564, 327/583, 361/58, 361/77, 361/84
Other Classes:
US Patent Ref:

3541357	Nov, 1970	Kram	307/303.
3562547	Feb, 1971	Brode	307/303.
3649883	Mar, 1972	Augustine	357/15.
3649887	Mar, 1972	Keller et al.	307/303.
3737742	Jun, 1973	Breuer et al.	357/15.
3829709	Aug, 1974	Maigret et al.	357/48.

Other Refs:
Primary Examiner: Larkins, William D.
Assistant Examiner:
Attorney: Connolly and Hutz