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Title: Microwave transistor amplifier
Abstract:
A low noise, multistage microwave transistor amplifier constructed using microwave integrated circuit techniques is disclosed. The illustrated embodiment is a two-stage transistor amplifier which is the basic building block for broadband, high-gain cascades. This amplifier features an interstage network consisting of a very short transmission line which minimizes the size and frequency dependence of the amplifier. This is achieved in the satellite communications band of 3.7 to 4.2 GHz by constructing the amplifier on a suitably low dielectric constant substrate rather than the usual high dielectric constant substrates used in microwave amplifier applications.
Other info: Inventors: Stegens, Ronald E. (Brookville, MD, US) Application Number: 469444 Filing Date: 1974-05-13 Publication_date: 1976-02-24 Assignee: Communications Satellite Corporation (Comsat) (Washington, DC) Primary Class(es): 330/286 330/53 Other Classes: US Patent Ref:
Other Refs: Other References: O'Clock, "Microstrig Amplifiers Can Be Simple," Electronic Design 14, July 8, 1971, pp. 66-68. Tucker, "Synthesis of Broadband Microwave Transistor Amplifiers," Electronics Letters, Aug. 12, 1971, Vol. 7, No. 16, pp. 455, 456. | |