Title: Method of making a semiconductor device

Abstract: A method of making a semiconductor device capable of high-speed operation is disclosed in which when the current gain-bandwidth is increased by the formation of a shallow base region. A side etching process is used to decrease the base spreading resistance and to allow ease in the formation of an emitter region of fine pattern. When the emitter region is formed by using polycrystalline silicon as a source of impurity diffusion, that area of an insulating film on a semiconductor substrate which adjoins the polycrystalline silicon is removed before the impurity diffusion so as to prevent an abnormal diffusion phenomenon. BACKGROUND OF THE INVENTION

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Inventors: Takagi, Mikio (Tokyo, JA)
Kamioka, Hajime (Tokyo, JA)
Nakayama, Kazufumi (Kawasaki, JA)
Shimoda, Haruo (Tama, JA)

Application Number: 468876
Filing Date: 1974-05-10
Publication_date: 1976-02-24
Assignee: Fujitsu Limited (Kawasaki, JA)
Primary Class(es): 438/365 148/DIG111, 148/DIG124, 148/DIG141, 148/DIG143, 148/DIG145, 257/592, 257/E21.033, 257/E21.151, 438/370, 438/375, 438/564
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US Patent Ref:
Other Refs:
Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Davis, J.
Attorney: Staas & Halsey