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Title:
Electronic timepiece semiconductor intergrated circuit
Abstract:
A semiconductor integrated circuit especially suitable for use in electronic timepieces to improve the operation thereof is provided. An integrated circuit chip including complementary coupled P-channel and N-channel MOS field effect transistors having insulation placed therebetween by forming same spaced on an insulating substrate. The insulation effects reduced current consumption to thereby enhance the life of the battery in an electronic timepiece.
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Inventors:
Morozumi, Shinji (Nagano, JA)
Application Number:
429992
Filing Date: 1974-01-02 Publication_date: 1976-02-24 Assignee:
Kabushiki Kaisha Suwa Seikosha (Tokyo, JA)
Primary Class(es):
368/87
257/350, 257/E27.062, 257/E27.111, 327/581, 331/116FE, 968/823, 968/902, 968/DIG1
Other Classes:
US Patent Ref:
Other Refs:
Other References:
J. D. Wilcock, Most Digital Logic Circuits in Silicon Films Deposited, Sapphire Substrates, Solid-State Electronics, 1971, Vol. 14, pp. 315-325. H. W. Kaiser et al., Recent Developments in CMOS/SOS, RCA Engineer, 8-1972, pp. 68-72. |