Title: Method for fabricating electrode structure for a semiconductor device having a shallow junction

Abstract: A thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate. A layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is formed over the thin aluminum film and is covered with a thick aluminum film. Oxides of the upper thick aluminum layer as well as oxides of the non-alloying metal and the lower aluminum layer are selectively formed in alignment with one another at locations where the electrodes are not formed.

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Inventors: Tsunemitsu, Hideo (Tokyo, JA)
Shiba, Hiroshi (Tokyo, JA)

Application Number: 501633
Filing Date: 1974-08-29
Publication_date: 1976-02-17
Assignee: Nippon Electric Co., Ltd. (Tokyo, JA)
Primary Class(es): 205/124 205/171, 205/228, 257/761, 257/763, 257/E21.291
Other Classes:
US Patent Ref:

3442701	May, 1969	Lepselter	117/212.
3634203	Jan, 1972	McMahon	317/234.
3663279	May, 1972	Lepselter	117/212.
3672984	Jun, 1972	Sato et al.	117/212.
3741880	Jun, 1973	Shiba et al.	29/577.
3798135	Mar, 1974	Bracken et al.	204/15.
3827949	Aug, 1974	Platter et al.	317/234.

Other Refs:
Primary Examiner: Tufariello, T. M.
Assistant Examiner:
Attorney: Hopgood, Calimafde, Kalil, Blaustein & Lieberman