Title: Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density

Abstract: A method for obtaining a homogeneous dislocation density in a semiconductor rod, by first subjecting the semiconductor rod in a known manner, to a crucible-free zone melting process whereby it becomes monocrystalline and free of dislocations, and thereafter an annealing zone is moved through the rod, under specified conditions.

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Inventors: Keller, Wolfgang (Munich, DT)

Application Number: 462936
Filing Date: 1974-04-22
Publication_date: 1976-02-17
Assignee: Siemens Aktiengesellschaft (Munich & Berlin, DT)
Primary Class(es): 438/502 117/3, 264/346, 423/348, 438/799
Other Classes:
US Patent Ref:

3030194	Apr, 1962	Emeis	23/301.
3441385	Apr, 1969	Schmidt	23/293.

Other Refs:
Primary Examiner: Tayman, Jr., James H.
Assistant Examiner:
Attorney: Lerner; Herbert L.