Title: Process for depositing the deposition agent on the surface of a number of semiconductor substrates

Abstract: A novel process for depositing and diffusing an impurity on and into the surface of a number of semiconductor wafers placed in parallel on a quartz boat. The impurity source is formed as a plurality of long and slender bars or a unitary tunnel-shaped element or a plurality of tunnel segments obtained by cutting the element apart. The impurity source as described above is mounted about the periphery of the semiconductor wafers arranged in a row on a quartz boat for reducing the consumption of the impurity source.

Do you think this is a good invention? Vote now:

Votes so far: For:(0) Against:(0)
Other info:

Inventors: Ryugo, Noboru (Takasaki, JA)
Inaniwa, Keizo (Takasaki, JA)
Sugiyama, Akira (Takasaki, JA)

Application Number: 456291
Filing Date: 1974-03-29
Publication_date: 1976-02-17
Assignee: Hitachi, Ltd. (JA)
Primary Class(es): 438/567 118/900, 257/E21.141, 438/568
Other Classes:
US Patent Ref:

2956913	Oct, 1960	Mack et al.	148/189.
3314833	Apr, 1967	Arndt et al.	148/189.
3362858	Jan, 1968	Knopp	148/189.
3374125	Mar, 1968	Goldsmith	148/189.
3604694	Sep, 1971	Muller	148/189.

Other Refs:
Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Craig & Antonelli