Title: Schottky barrier diode semiconductor structure and method

Abstract: Schottky barrier diode semiconductor structure having a semiconductor body formed essentially of silicon and having a surface with an active device formed in the semiconductor body having collector, base and emitter regions and with at least two metals on said surface combining with the silicon to form an alloy of at least two metals and silicon which is in contact with the collector, base and emitter regions and also extends beyond the base region to form a Schottky barrier diode having a barrier height which is determined by the composition of the alloy. In the method, the alloy of at least the two metals in combination with the silicon is adjusted to modify the barrier height of the Schottky barrier diode so that a barrier height can be chosen ranging from between 0.64 and 0.835.

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Inventors: Rosvold, Warren C. (Sunnyvale, CA, US)

Application Number: 470939
Filing Date: 1974-05-17
Publication_date: 1976-02-17
Assignee: Signetics Corporation (Sunnyvale, CA)
Primary Class(es): 438/571 148/DIG139, 257/477, 257/E21.175, 257/E21.608, 257/E27.04, 438/581
Other Classes:
US Patent Ref:

3590471	Jul, 1971	Lepselter	29/578.
3609472	Sep, 1971	Bailey	29/589.
3616380	Oct, 1971	Lepselter	357/15.
3623925	Nov, 1971	Jenkins	357/15.
3699408	Oct, 1972	Shinoda	357/15.

Other Refs:
Primary Examiner: Tupman, W.
Assistant Examiner:
Attorney: Flehr, Hohbach, Test, Albritton & Herbert