Title: Process for treatment of semiconductor

Abstract: In the embodiment is specifically described a method for irradiating a transistor device with radiant rays. The top surface of the semiconductor crystal contained in the transistor device is exposed to the radiant rays so that the radiated energy impinging upon a preselected part of the base region, underneath the emitter electrode, is less than that impinging upon the other parts of the base region. Masking and radiant ray absorptive material are used to facilitate the process. Thereafter, the device and/or crystal is subjected to heat treatment to selectively improve such characteristics of the transistor as amplifying and switching characteristics to produce transistors suitable to a necessity of different applications.

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Inventors: Miura, Shunji (Higashikurume, JA)
Kawamata, Toshio (Fujimi, JA)

Application Number: 316579
Filing Date: 1972-12-19
Publication_date: 1976-02-10
Assignee: Origin Electric Co., Ltd. (Tokyo, JA)
Primary Class(es): 257/590 148/DIG23, 257/678, 257/E21.328, 438/121, 438/378, 438/904
Other Classes:
US Patent Ref:

3540925	Nov, 1970	Athanas	29/576.
3590471	Jul, 1971	Lepselter	29/576.
3595716	Jul, 1971	Kerr	317/235.
3622382	Nov, 1971	Karl	29/576.
3691376	Sep, 1972	Bauerlein	317/235.

Other Refs:
Primary Examiner: Tupman, W.
Assistant Examiner:
Attorney: Stults; Harold L.