Title: Process of manufacturing semiconductor devices

Abstract: A cylindrical substrate of semiconductive material is repeatedly incised by a saw to be formed with many parallel grooves while it has one portion of the peripheral portion remaining uncut throughout its length. Thus, the grooves define between them many parallel wafer units integrally interconnected through the uncut portion. Then all the wafer units are simultaneously cleaned, diffused with an impurity, etched, and so on. After the completion of all the simultaneous processing operations, the wafer units are removed from the uncut portion to form separate wafers.

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Inventors: Nakata, Josuke (Itami, JA)

Application Number: 515105
Filing Date: 1974-10-15
Publication_date: 1976-02-03
Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JA)
Primary Class(es): 438/497 117/59, 252/62.3E, 252/62.3GA, 438/460, 438/493
Other Classes:
US Patent Ref:

2727839	Dec, 1955	Sparks	148/1.
3128213	Apr, 1964	Gault et al.	148/187.
3152933	Oct, 1964	Reuschel	148/175.
3664294	May, 1972	Solomon	148/171.
3859148	Jan, 1975	Dawson et al.	148/172.

Other Refs:
Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Wenderoth, Lind & Ponack