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Title: Method of making a compound semiconductor layer of high resistivity

Abstract: A method is provided for making a semiconductor layer having a high resistivity comprising the steps of implanting ions into a semiconductor comprising gallium and arsenic at a first acceleration voltage at a concentration higher than the limit of solid solubility of said ions in said semiconductor, the ions being of a material which forms a deep energy level in said semiconductor; implanting protons into said semiconductor at an acceleration voltage less than said first acceleration voltage; and then heating the semiconductor, for example, from 300.degree.C to 700.degree.C.


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Other info:


Inventors: Shinoda, Daizaburo (Tokyo, JA)

Application Number: 436802
Filing Date: 1974-01-25
Publication_date: 1976-02-03
Assignee: Nippon Electric Company Limited (Tokyo, JA)
Primary Class(es): 438/520 257/E21.34, 257/E21.542, 438/403, 438/522
Other Classes:
US Patent Ref:
3718502Feb, 1973Gibbons148/1.
3824133Jul, 1974D'Asaro148/1.

Other Refs:
Primary Examiner: Rosenberg, Peter D.
Assistant Examiner:
Attorney: Hopgood, Calimafde, Kalil, Blaustein and Lieberman