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Primary Examiner: Edlow, Martin H.
Assistant Examiner:
Attorney: Trifari; Frank R., Nigohosian; Leon

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Title: Semiconductor device having a Schottky junction and method of manufacturing same

Abstract: A semiconductor device having a Schottky junction formed by providing a semiconductor body at least two metal layers one on top of the other which can each form a Schottky barrier with the semiconductor, in which, according to the invention, the formed Schottky diode has a higher barrier than each of the metals individually relative to the semiconductor, by heating the assembly above 400.degree.C. Preferably nickel or cobalt is first provided and thereon aluminum, and heating is carried out at 500.degree.C.

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Other info:

Inventors: Landheer, Frits (Eindhoven, NL)
Wilting, Hermanus Josephus Henricus (Eindhoven, NL)

Application Number: 547997
Filing Date: 1975-02-07
Publication_date: 1976-01-27
Assignee: U.S. Philips Corporation (New York, NY)
Primary Class(es): 257/260 257/280, 257/486, 438/167, 438/571, 438/573
Other Classes:
US Patent Ref:

3636417	Jan, 1972	Kimura	317/234.
3669730	Jun, 1972	Lepselter	117/200.
3767984	Oct, 1973	Shinoda	317/235.

Other Refs: Other References: Sze, Physics of Semiconductor Devices, Wiley & Son, N.Y., 1969, pp. 366-367.