Title: Semiconductor diode with voltage-dependent capacitance

Abstract: A semiconductor wafer constituting a diode with voltage-dependent capacitance, having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The larger P-N junction of the semiconductor diode is energized by a positive potential, thus becoming forward-biased, while the smaller junction is energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the two P-N junctions.

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Inventors: Korovin, Stanislav Konstantinovich (ULIT, SA)
Kruglov, Igor Ivanovich
Preobrazhentsev, Konstantin Andreevich (ULIT, SA)
Sidorov, Jury Ivanovich
Fronk, Stanislav Vladislavovich

Application Number: 444983
Filing Date: 1974-02-22
Publication_date: 1976-01-27
Assignee:
Primary Class(es): 257/595 257/469, 257/E29.344
Other Classes:
US Patent Ref:

2989650	Jun, 1961	Doucette et al.	357/14.
3093755	Jun, 1963	Haberecht et al.	357/14.
3176151	Mar, 1965	Atalla et al.	357/14.
3233196	Feb, 1966	Osafune et al.	357/14.
3307088	Feb, 1967	Fujikawa	357/14.
3532945	Oct, 1970	Weckler	357/14.
3544395	Dec, 1970	Terasaki	357/14.
3764415	Oct, 1973	Raabe et al.	357/14.

Other Refs:
Primary Examiner: James, Andrew J.
Assistant Examiner:
Attorney: Haseltine, Lake & Waters