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Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Cushman, Darby & Cushman

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Title: Method of manufacturing a green light-emitting gallium phosphide device

Abstract: A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of preparing a liquid-phase epitaxial solution of one conductivity type containing a high concentration of nitrogen at a higher temperature than 1000.degree.C; bringing said epitaxial growth solution now cooled to 600.degree.C to 1000.degree.C into contact with a gallium phosphide substrate of the same conductivity type as said solution; cooling said epitaxial growth solution to form a liquid-phase epitaxial layer on said substrate; and forming a region in close proximity to said liquid-phase epitaxial layer with the opposite conductivity type thereto.

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Inventors: Beppu, Tatsuro (Tokyo, JA)
Iwamoto, Masami (Yokohama, JA)
Sekiwa, Tetsuo (Kawasaki, JA)

Application Number: 457649
Filing Date: 1974-04-03
Publication_date: 1976-01-27
Assignee: Tokyo Shibaura Electric Co., Ltd. (Kawasaki, JA)
Primary Class(es): 438/46 117/56, 252/62.3GA, 252/950
Other Classes:
US Patent Ref:

3462320	Aug, 1969	Lynch et al.	148/171.
3603833	Sep, 1971	Logan et al.	148/171.
3617820	Nov, 1971	Herzog	148/189.
3646406	Feb, 1972	Logan et al.	148/171.
3725749	Apr, 1973	Groves et al.	148/171.
3755017	Aug, 1973	Coughlin	148/189.

Other Refs: Other References: Stringfellow, J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 19, No. 12, Dec. 1972, pp. 1780-1782.