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Primary Examiner: Heyman, John S.
Assistant Examiner:
Attorney: Craig & Antonelli

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Title: Semiconductor circuit devices using insulated gate-type field effect elements having protective diodes

Abstract: Insulated gate-type field effect transistors used in capacitive memory circuits and having protective diodes for protecting the insulating films below the gate electrodes from electrical breakdown, in which parasitic transistor action which might be caused by minority carriers injected into semiconductor substrates by noise signals applied to the protective diodes are eliminated by means for suppressing the injection of minority carriers or by means for preventing injected minority carriers from reaching the drain regions of the field effect transistors.

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Other info:

Inventors: Nomiya, Kosei (Tokyo, JA)
Kohisa, Toshihiko (Sayama, JA)
Matsumura, Isao (Kodaira, JA)

Application Number: 768794
Filing Date: 1968-10-18
Publication_date: 1976-01-20
Assignee: Hitachi, Ltd. (JA)
Primary Class(es): 327/390 257/356, 257/E21.54, 257/E21.544, 257/E21.545, 257/E21.573, 257/E27.032, 327/434, 327/566, 361/56
Other Classes:
US Patent Ref:

3408511

Oct, 1968

Bergersen et al.

307/304.

Other Refs: Other References: Semiconductor Electronics by Sorensen, 1961, p. 11.