Title: High sensitivity positive resist layers and mask formation process

Abstract: A high sensitivity resist layer structure for high energy radiation exposure is formed by coating plural layers of radiation degradable polymers on a substrate which layers are successively slower dissolving in the resist developer. Upon exposure and solvent development, a resist edge profile is obtained which is particularly useful for metal lift-off.

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Inventors: Moreau, Wayne M. (Wappinger Falls, NY, US)
Ting, Chiu H. (Hopewell Junction, NY, US)

Application Number: 426403
Filing Date: 1973-12-19
Publication_date: 1976-01-20
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Class(es): 430/5 427/273, 427/352, 428/520, 428/901, 430/270.1, 430/285.1, 430/296, 430/319, 430/321, 430/324, 430/326, 430/329, 430/502, 430/509, 522/153
Other Classes:
US Patent Ref:

2964401	Dec, 1960	Plambeck	96/35.
2993789	Jul, 1961	Crawford	96/35.
3535137	Oct, 1970	Haller et al.	117/93.
3799777	Mar, 1974	O'Keefe	96/36.

Other Refs:
Primary Examiner: Newsome, John H.
Assistant Examiner:
Attorney: Bunnell; David M.