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Title: Process of manufacturing whisker crystalline silicon carbide

Abstract: Whisker crystalline silicon carbide is prepared by heating a silicon-containing material for example, elemental silicon, silicon oxides, silicon hydroxides, silicon salts and the like with a halogen and carbon-containing material, such as a mixture of hydrocarbon and chlorine-containing material selected from chlorine, hydrogen chloride, tetrachloromethane and phosgene and halogenated hydrocarbon at a temperature of 800.degree.C or higher under a substantial oxygen and nitrogen gas-free condition.


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Inventors: Kimura, Isao (Suita, JA)
Habata, Hidetsugu (Osaka, JA)

Application Number: 125469
Filing Date: 1971-03-18
Publication_date: 1976-01-20
Assignee:
Primary Class(es): 423/345 423/440
Other Classes:
US Patent Ref:
3306705Feb, 1967Leineweber et al.423/346.
3371995Mar, 1968Pultz423/346.
3399980Sep, 1968Bourdeau23/208.
3622272Nov, 1971Shyne et al.423/346.
3709981Jan, 1973Lee et al.423/346.

Other Refs: 1,552,0051,184,7391,563,415
Nov, 1968FR
Jan, 1965DT
Mar, 1969FR

Primary Examiner: Meros, Edward J.
Assistant Examiner: Wheelock, Eugene T.
Attorney: Woodhams, Blanchard & Flynn