Title: Process of producing semiconductor planar device

Abstract: A silicon dioxide film and a silicon nitride film are successively vapor-deposited on a main face of an N type silicon substrate processed with H.sub.2 O.sub.2 water. Those portions of both films underlaid by a P type region to be subsequently formed and their peripheral portions are selectively removed. Then a P type impurity is diffused into the central exposed portion of the main substrate face to form the P type region with a PN junction having a termination facing the silicon dioxide film. Also a silicon dioxide film is thermally formed on the peripheral exposed portion of the main face.

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Inventors: Hagino, Hiroyasu (Itami, JA)
Kajiwara, Yasuya (Itami, JA)
Nagai, Seiichi (Itami, JA)

Application Number: 542251
Filing Date: 1975-01-20
Publication_date: 1976-01-20
Assignee: Mitsubishi Denki Kabushiki Kaisha (JA)
Primary Class(es): 438/133 257/552, 257/565, 257/E21.033, 257/E21.228, 257/E21.269, 438/134, 438/546, 438/555, 438/762, 438/763, 438/910
Other Classes:
US Patent Ref:

3281915	Nov, 1966	Schramm	148/187.
3477886	Nov, 1969	Ehlenberger	148/187.
3597667	Aug, 1971	Horn	148/187.
3696276	Oct, 1972	Boland	148/187.
3717514	Feb, 1973	Burgess	148/187.

Other Refs:
Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Davis, J. M.
Attorney: Burns; Robert E., Lobato; Emmanuel J., Adams; Bruce L.